Low-bandgap, monolithic, multi-bandgap, optoelectronic devices [electronic resource]

• Ngôn ngữ: eng
• Ký hiệu phân loại: 621.3815 Electrical, magnetic, optical, communications, computer engineering; electronics, lighting
• Thông tin xuất bản: Golden, Colo. : Oak Ridge, Tenn. : National Renewable Energy Laboratory (U.S.) ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2016
• Mô tả vật lý: Medium: ED : , digital, PDF file.
• Bộ sưu tập: Metadata
• ID: 255813
• Chủ đề: 1. 30 direct energy conversion; 2. 32 energy conservation, consumption, and utilization; 3. 71 classical and quantum mechanics, general physics

Tóm tắt

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.