An improved method for determining carrier densities via drive level capacitance profiling [electronic resource]

 0 Người đánh giá. Xếp hạng trung bình 0

Tác giả:

Ngôn ngữ: eng

Ký hiệu phân loại: 621.3 Electrical, magnetic, optical, communications, computer engineering; electronics, lighting

Thông tin xuất bản: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of Energy Efficiency and Renewable Energy ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2017

Mô tả vật lý: Size: Article No. 203901 : , digital, PDF file.

Bộ sưu tập: Metadata

ID: 255732

 In this paper, we demonstrate that an analytic relationship between coefficients in the Taylor expansion of the junction capacitance can be exploited to yield more precise determinations of carrier densities in drive level capacitance profiling (DLCP). Improvements are demonstrated on data generated according to the DLCP theory and in measurements performed on a CuIn<
 sub>
 x<
 /sub>
 Ga<
 sub>
 1?x<
 /sub>
 Se<
 sub>
 2<
 /sub>
  device. We argue that the improved DLCP method is especially important for non-uniform devices, which are more susceptible to noise in the capacitance data used in DLCP because they require that the amplitude of the drive level be restricted. Importantly, the analysis does not require the collection of any data other than what is typically collected during a DLCP measurement while employing fewer independent parameters than the model that is typically used in DLCP. Finally and thus, we expect that it will be readily adoptable by those who perform DLCP measurements.
Tạo bộ sưu tập với mã QR

THƯ VIỆN - TRƯỜNG ĐẠI HỌC CÔNG NGHỆ TP.HCM

ĐT: (028) 71010608 | Email: tt.thuvien@hutech.edu.vn

Copyright @2020 THƯ VIỆN HUTECH