Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry [electronic resource]

• Ngôn ngữ: eng
• Ký hiệu phân loại: 621.38 Electronics, communications engineering
• Thông tin xuất bản: Golden, Colo. : Oak Ridge, Tenn. : National Renewable Energy Laboratory (U.S.) ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2019
• Mô tả vật lý: Size: p. 6761-6772 : , digital, PDF file.
• Bộ sưu tập: Metadata
• ID: 256118
• Chủ đề: 1. 30 direct energy conversion; 2. 47 other instrumentation; 3. Accelerated aging; 4. Failure precursor and mechanism; 5. Igbt condition monitoring; 6. Lifetime estimation; 7. Power electronics; 8. Reliability; 9. Spread spectrum time domain reflectometry; 10. Sstdr

Tóm tắt

High thermal and electrical stress, over a period of time tends to cause deterioration of the health of power electronic switches. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module. Through this paper, a new method for online condition monitoring of IGBTs and IGBT modules using SSTDR has been proposed. Unlike traditional methods, this research work concentrates at the gate terminals of the device instead of looking at the collector side. In addition, the RL-equivalent circuit to represent a bond wire has been developed for the DUT and simulated in CST Studio Suite to measure the reflection amplitudes. Both the experimental and simulation results have been compared. These results prove that a single measurement is sufficient to predict the failure of the device instead of looking at the traditional precursor parameter. With only two sets of measurements, it is possible to locate the aged device inside a module and detect the number of bond wire lift offs associated to that device.